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Characterization of Auger Recombination and Its Contribution to the Efficiency Droop in III-Nitride Quantum Wells

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Abstract

Tailored (AlGaIn)N multi-quantum well structures are characterized using low temperature photoluminescence spectroscopy. The results show that Auger recombination plays a key role in the efficiency droop in (AlGaIn)N based LEDs at high carrier densities.

© 2015 Optical Society of America

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