Abstract

The photoluminescence of nanostructured silicon obtained by metal-assisted chemical etching (MaCE) is investigated. It is shown that the intensity and the peak of photoluminescence depend on the silicon morphology caused by MaCE conditions.

© 2012 Optical Society of America

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More Like This
Optical Reflectance of Nanostructured Silicon Fabricated by Metal-assisted Chemical Etching at Ammonia Adsorption

I. R. Iatsunskyi, V. A. Smyntyna, N. N. Pavlenko, O. V. Sviridova, and O. A. Rimashevskyi
FTu3A.23 Frontiers in Optics (FiO) 2013

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