Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > FiO > 2011 > FThJ > FThJ3

Interaction of Polarized near-UV Light with Si Nanostructures: Raman Imaging and Stress Study

Vladimir Poborchii, Tetsuya Tada, Yukinori Morita, Toshihiko Kanayama, and Pavel I. Geshev

Not Accessible

Your library or personal account may give you access

Abstract

A record high Si structure Raman efficiency is obtained in near UV for ~10 nm wide Si nanowires. Using high-numerical-aperture lens, we observed Raman-forbidden phonons of strained-Si nanowires/islands and measured stress relaxation.

© 2011 Optical Society of America

PDF Article
More Like This
Precise and stable polarization control in a tightly focusing system for accurate characterization of strained Silicon nanostructures

Maria Vanessa Balois, Norihiko Hayazawa, Alvarado Tarun, Oussama Moutanabbir, and Satoshi Kawata
19a_D5_9 JSAP-OSA Joint Symposia (JSAP) 2013

Raman microprobe analysis of stress distribution in Si3N4 stripe GaAIAs channel optical waveguides

C. J. Radens, J. T. Boyd, H. E. Jackson, and R. D. Burnham
WE6 Integrated Photonics Research (IPR) 1990

Polarization Properties of Suspended Si:Ga Nanowires

Michael J. Theisen, Brian L. McIntyre, and Thomas G. Brown
FThJ2 Frontiers in Optics (FiO) 2011

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use