Abstract
We review III-V on silicon-on-insulator (SOI) heterogeneous integration for the demonstration of lasers, suitable for inter-chip and intra-chip optical interconnects. A low temperature oxygen plasma enhanced bonding technology is used to realize the III-V/SOI integration. The realization of silicon AWG lasers, quantum well intermixed DFB lasers and micro ring lasers on the III-V/SOI material platform is discussed.
© 2010 Optical Society of America
PDF ArticleMore Like This
G.-H. Duan, G. Levaufre, A. Shen, N. Girard, S. Olivier, S. Malhouitre, A. Accard, C. Jany, A. Le Liepvre, D. Make, F. Lelarge, J. Decobert, G. de Valicourt, K. Ribaud, and C. Kopp
IT1A.1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2015
Mitsuru Takenaka, Hanzhi Tang, Kouhei Watanabe, Takaya Ochiai, Tomohiro Akazawa, Masahiro Fujita, Chengli Chai, Mingzhi Huang, Yosuke Wakita, Yuto Miyatake, Shuhei Ohno, Kei Sumita, Stephane Monfray, Frederic Boeuf, Makoto Okano, Rui Tang, Kasidit Toprasertpong, and Shinichi Takagi
IM3A.1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2023
G. Roelkens, S. Keyvaninia, Y. De Koninck, P. Mechet, T. Spuesens, M. Tassaert, S. Stankovic, G. Morthier, R. Baets, D. Van Thourhout, F. Lelarge, G.-H. Duan, S. Messaoudene, J.M. Fedeli, T. De Vries, B. Smalbrugge, E.J. Geluk, J. Bolk, and M. Smit
ATh3A.5 Asia Communications and Photonics Conference (ACP) 2013