Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Highly efficient near-infrared electroluminescence devices based on PbS nanocrystals

Not Accessible

Your library or personal account may give you access

Abstract

We report on the structural and optoelectronic properties of low-cost near infrared light-emitting diodes using dip-coated lead-sulfide nanocrystal films as the active layer. We achieved efficient room-temperature electroluminescence using this facile fabrication scheme.

© 2010 Optical Society of America

PDF Article
More Like This
High-Performance 1550 nm Polymer-based LEDs on Silicon Using Hybrid Polyfluorene-based Type-II Heterojunctions

Xin Ma, Fan Xu, and Sylvain G. Cloutier
FWD2 Frontiers in Optics (FiO) 2010

Polarity-controlled Visible/IR Electroluminescence in Si-nanocrystal/Si Light-emitting Diodes

Zhihong Liu, Jiandong Huang, Pooran C. Joshi, Apostolos T. Voutsas, John Hartzell, Federico Capasso, and Jiming Bao
CTuNN5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Weak exciton-photon coupling of PbS nanocrystals in air-slot mode-gap Si photonic crystal nanocavities in the near-infrared

Jie Gao, Felice Gesuele, Weon-kyu Koh, Christopher B. Murray, Solomon Assefa, and Chee Wei Wong
QFH3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2010

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved