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Structural and Optical Characterization of Germanium-Rich Islands on Silicon Grown by Molecular Beam Epitaxy

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Abstract

We report on the structural and photo-emissive properties of Germanium-rich islands grown on Silicon by Molecular Beam Epitaxy and the improvement in their light-emission at optical-communication frequencies due to the effects of strain and doping.

© 2010 Optical Society of America

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