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Low Temperature Fabrication of Hybrid Organic-Inorganic Photoconductive Diode

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Abstract

One of the most highly touted advantages of organic electronics, along with ease of device fabrication, is their capability for remaining functional while being flexible. This suggests a whole host of new applications where device structure may not be planar and rigidity is an undesirable trait. Here we have developed a hybrid photoconductive diode based on a polymeric material and amorphous hydrogenated silicon (a-Si:H). The a-Si:H was deposited at low temperature (< 140 °C) via hot wire chemical vapor deposition (HWCVD). The hybrid diode showed some remarkable characteristics among which are: a high photosensitivity (near 700), a high photogain (140), and a reasonably fast response time (500 µs). The properties of the photodiode are greatly affected by the energy level offset between the a-Si:H and the band edge of the polymer. We will discuss the current understanding and findings as well as highlight our future development in this area.

© 2003 Optical Society of America

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