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Crystallographic Anisotropy in InAs Quantum Dashes on GaAs

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Abstract

Understanding the mechanisms that control self-assembly in semiconductor nanostructures is an important step towards tailoring their formation. Using high-resolution transmission electron microscopy (HRTEM), we are able to map the lattice constant within symmetric quantum dot (QD) and asymmetric quantum dash (Qdash) nanostructures. Comparative analysis of the two structures provides information about the roles of adatom migration and strain in the determining the crystallographic nature of the 3D structures.

© 2003 Optical Society of America

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