Compact X-ray Sources for Metrology Applications in the Semiconductor Industry

Daniel F. Sunday; Donald Windover; R. Joseph Kline

doi:10.1364/EUVXRAY.2016.EM6A.4

High-Brightness Sources and Light-Driven Interactions
OSA technical Digest (online) (Optica Publishing Group, 2016),
paper EM6A.4
•https://doi.org/10.1364/EUVXRAY.2016.EM6A.4

Compact X-ray Sources for Metrology Applications in the Semiconductor Industry

Daniel F. Sunday, Donald Windover, and R. Joseph Kline

Compact EUV & X-ray Light Sources 2016

Long Beach, California United States
20–22 March 2016
ISBN: 978-1-943580-09-5

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Applications II (EM6A)

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D. F. Sunday, D. Windover, and R. J. Kline, "Compact X-ray Sources for Metrology Applications in the Semiconductor Industry," in High-Brightness Sources and Light-Driven Interactions, OSA technical Digest (online) (Optica Publishing Group, 2016), paper EM6A.4.

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Abstract

The semiconductor industry needs new metrology methods to continue their current path to next generation integrated circuits. X-ray-based methods hold great promise, but are too slow with commercial compact X-ray sources. Improvements of several orders of magnitude in brightness will enable these new metrology tools. We will discuss the measurements and the compact X-ray source requirements for semiconductor applications.

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