Abstract

Several X-ray based techniques are applicable for characterization and metrology in semiconductor applications. Most X-ray based techniques are limited by the available X-ray flux from conventional X-ray tubes. A conventional X-ray tube generates X-rays when highly energetic electrons are stopped in a solid metal anode. The fundamental limit for the X-ray power generated from a given spot size is when the electron beam power is so high that it locally melts the anode. The liquid-metal-jet anode (MetalJet) technology solves this thermal limit by replacing the traditional anode by a thin high-speed jet of liquid metal. Melting of the anode is thereby no longer a problem as it is already molten, and significantly (currently about 10x) higher e-beam power densities can therefore by used.

© 2016 Optical Society of America