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  • 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper eg_p_8

Investigation of Electrical Transport in Semiconductor Heterostructure Devices Coupled Strongly to the Light Field

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Abstract

Intersubband Polaritons [1] are quasi-particles that form under strong light-matter coupling conditions in semiconductor heterostructures. The two main requirements are a high-Q tunable cavity and a suitable intersubband transition. Intersubband polaritons are predicted to enable novel applications such as the intersubband polariton laser [2]. The most characteristic feature of intersubband polaritons is their avoided-crossing property. When the detuning between the cavity resonance and the intersubband transition is very small (i.e. the cavity resonance frequency equals the intersubband transition energy) the two absorptions caused by the cavity and the intersubband transitions become indistinguishable. For the matter part we used triple-barrier resonant tunneling diodes (TBRTDs) [3].

© 2019 IEEE

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