Abstract

In nanowires, crystal phase quantum dots (QDs) can be synthesized by modifying the crystallographic structure as is shown in figure 1 [1]. This structuring can be made with atomic monolayer precision, and this good control of the geometry makes QDs in nanowires attractive systems for engineering quantum dot-based functionalities such as quantum gates. The crystallographic interfaces usually feature Type II band alignment, where electrons and holes are spatially separated onto the different polytypes, which is a key asset in implementing quantum gates. However, it also leads to very small oscillator strength (OS) in these structures compared to Type-I QDs.

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