Abstract
Self-assembled quantum dots in III-V materials have many favourable attributes for the realisation of quantum optical circuits. These include well developed III-V fabrication technology, the very high radiative efficiency of III-V dots, the strong coupling to light, ability to drive at high speeds, well defined spin states and behaviour as deterministic single photon sources, to name just some. The results in this paper exploit many of these advantages to achieve quantum-optical circuits based on InGaAs quantum dots embedded in GaAs nanobeam waveguides.
© 2015 IEEE
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