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Conferences > EQEC > 2011 > EG2 > EG2_6
  • CLEO/Europe and EQEC 2011 Conference Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2011),
  • paper EG2_6

Interband Transitions in InP biased with THz Fields of 4 MV/cm

C. Schmidt, O. Schubert, F. Junginger, S. Mährlein, B. Mayer, A. Sell, R. Huber, and A. Leitenstorfer

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Abstract

The influence of strong electric fields on electronic properties of semiconductors is of particular interest both for fundamental science and applications in high speed electronics. Investigations using large quasi-static [1] and THz [2] fields have been performed. However, the accessible field amplitudes have been limited to values typically below 1 MV/cm due to the dielectric breakdown under stationary bias and the availability of intense phase-stable THz sources, respectively.

© 2011 IEEE

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