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InP Based Quantum Dot/Dash Material for High Speed Optoelectronic Devices: Recent Results and Prospects

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Abstract

A review is given on the recent progress in 1.55 µm QD laser material based on an improved geometry control of QDs and its application in high speed optoelectronic devices. Also a prospect will be given for the realization of high speed directly modulated QD lasers having the potential to reach data rates of 25 GBit/s.

© 2012 Optical Society of America

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