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Transfer of diffractive optical elements into GaAs by use of inductively coupled plasma etching for integration with vertical-cavity surface-emitting lasers

Mikael Karlsson, Fredrik Nikolajeff, Hans Martiroson, and Anders Larsson

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Abstract

Transfer of diffractive optical structures from resist into GaAs, by use of direct-write electron-beam litography followed by dry etching in an inductively-coupled plasma is demonstrated. Our goal is to monolithically integrate diffractive structures with VCSELs.

© 2000 Optical Society of America

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