Abstract
We report in-plane III-V p-i-n photodetectors selectively grown on (001) silicon-on- insulator (SOI) wafers. These devices feature a responsivity of around 0.7 A/W at 1550 nm and 1.8 A/W at 1310 nm, a low dark current of 6 nA at -1 V bias, and high-speed operation beyond 40 Gb/s.
© 2021 The Author(s)
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