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Phosphor-free III-nitride red micro-light emitting diodes for display applications

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Abstract

In this study, we report highly stable phosphor-free InGaN/AlGaN spontaneously formed core-shell nanowire red micro-light emitting diodes (μLEDs) with 30 × 30 μm2 mesa area directly grown on Si (111) substrates using molecular beam epitaxy.

© 2021 The Author(s)

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