InGaAs Photodiode Array on Silicon by Heteroepitaxy

Bowen Song; Bei Shi; Simone Šuran Brunelli; Jonathan Klamkin

doi:10.1364/CLEO_SI.2021.STh2H.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2021),
paper STh2H.2
•https://doi.org/10.1364/CLEO_SI.2021.STh2H.2

InGaAs Photodiode Array on Silicon by Heteroepitaxy

Bowen Song, Bei Shi, Simone Šuran Brunelli, and Jonathan Klamkin

CLEO: Science and Innovations 2021

San Jose, California United States
9–14 May 2021
ISBN: 978-1-943580-91-0

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Integrated Photonics (STh2H)

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B. Song, B. Shi, S. Š. Brunelli, and J. Klamkin, "InGaAs Photodiode Array on Silicon by Heteroepitaxy," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper STh2H.2.

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Abstract

InGaAs photodiode arrays were realized on Si by heteroepitaxy, demonstrating a dark current as low as 5.71 nA at -1 V and responsivity as high as 0.64 A/W at 1550 nm and at room temperature.

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