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InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration

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Abstract

We present a fabrication process for 200 nm thick InGaAsP/InP membrane gain sections ( = 1550 nm) suitable for heterogeneous integration with SiNx PICs. The structures exhibit desired electrical performance and support lasing.

© 2021 The Author(s)

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