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Efficiency improvement of InGaN LEDs at elevated temperature with dome-shaped patterned-sapphire substrates

Meng-Hsin Chen, Chieh-Hsiung Kuan, and Vin-Cent Su

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Abstract

The efficiency of InGaN LEDs working at elevated temperatures has been improved by introducing patterned-sapphire substrates with dome-shaped nanostructures of the optimized height through the analysis of electroluminescence of devices using an integrating sphere.

© 2021 The Author(s)

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