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Conferences > CLEO_SI > 2021 > JTu3A > JTu3A.69

Optoelectronic Readout of STT-RAM Memory Cells Using Plasmon Drag Effect

Parinaz Sadri-Moshkenani, Mohammad Wahiduzzaman Khan, Md Shafiqul Islam, Dan Shi, Eric Montoya, Ilya Krivorotov, Nader Bagherzadeh, and Ozdal Boyraz

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Abstract

An optoelectronic readout method for reading the state of STT-RAM cells based on plasmon drag effect is proposed. Our simulations show that the proposed scheme can achieve up to 29.6 Gbit/sec readout speed.

© 2021 The Author(s)

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