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UV laser-induced spatially selective deep oxidation of GaAs

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Abstract

UV laser-induced surface oxidization and spontaneous periodic surface patterning of monocrystalline GaAs wafers is presented here. Irradiation of the semiconductor's (100) surface with UV laser radiation (244 nm) in ambient conditions results in the formation of regular periodic surface structures, known as laser-induced periodic surface structures (LIPSS). At the higher end of the irradiation intensities used in our experiments the periodic oxide features merge to form a continuous porous oxide layer with a thickness of ~0.4 um.

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