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Conferences > CLEO_SI > 2020 > STu3M > STu3M.6

Temperature stable, narrow linewidth heterogeneously integrated semiconductor laser with Si3N4 cavity

Chao Xiang, Warren Jin, Joel Guo, Jonathan D. Peters, MJ Kennedy, Jennifer Selvidge, Paul A. Morton, and John E. Bowers

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Abstract

We demonstrate the first heterogeneously integrated laser with a Si3N4 external cavity. Through a multilayer heterogeneous integration with InP and Si, the laser shows narrow linewidth and high temperature stability expected from a Si3N4 cavity.

© 2020 The Author(s)

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