Narrow Linewidth Photoluminescence from Top-Down Fabricated 20 nm InGaN/GaN Quantum Dots at Room Temperature

Bryan Melanson; David Starling; Matt Hartensveld; Gregory Howland; Stefan Preble; Jing Zhang

doi:10.1364/CLEO_SI.2020.STh4H.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper STh4H.2
•https://doi.org/10.1364/CLEO_SI.2020.STh4H.2

Narrow Linewidth Photoluminescence from Top-Down Fabricated 20 nm InGaN/GaN Quantum Dots at Room Temperature

Bryan Melanson, David Starling, Matt Hartensveld, Gregory Howland, Stefan Preble, and Jing Zhang

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Nonlinear Optical Transformation of Semiconductors (STh4H)

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B. Melanson, D. Starling, M. Hartensveld, G. Howland, S. Preble, and J. Zhang, "Narrow Linewidth Photoluminescence from Top-Down Fabricated 20 nm InGaN/GaN Quantum Dots at Room Temperature," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper STh4H.2.

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Abstract

Promising narrow linewidth photoluminescence with a FWHM of 7.1 nm at wavelength 418 nm was achieved at room temperature from InGaN/GaN quantum dots in a 20-nm-diameter top-down fabricated nanowire.

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