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2 μm Actively Mode-locked External-cavity Semiconductor Laser

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Abstract

We have for the first time demonstrated a 450 MHz actively mode-locked externalcavity semiconductor laser at 2 pm. The system can be tuned from 1870-1980 nm, which makes the laser a wavelength-agile pulsed source.

© 2020 The Author(s)

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More Like This
Short Pulse and Low Noise Actively Mode-locked 10 GHz Semiconductor Laser with a Fiber Bragg Grating External Cavity

M. Duelk, H. Melchior, W. Hunziker, and L. Tallone
WDD76 Optical Fiber Communication Conference (OFC) 2001

2 GHz Regeneratively Mode-locked Laser at 2 Micron

Jiarong Qin, Weiqi Jiang, Shiyu Zhu, Ruihong Dai, Yafei Meng, Yao Li, and Fengqiu Wang
SW4R.4 CLEO: Science and Innovations (CLEO:S&I) 2020

Benefits of intrawaveguide saturable absorbers in external cavity mode-locked semiconductor lasers

D. J. Derickson, R. J. Helkey, A. Mar, R. L. Thornton, and J. E. Bowers
MG5 OSA Annual Meeting (FIO) 1991

Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

Josep Mulet, Jesper Moerk, and Marcel Kroh
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Actively mode-locked injection laser with external coupled cavity

A. G. BULUSHEV, E. M. DIANOV, A. V. KUZNETSOV, and O. G. OKHOTNIKOV
CTHI14 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990

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