Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

Not Accessible

Your library or personal account may give you access

Abstract

Here we show how strain-engineering (~4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz^2.

© 2020 The Author(s)

PDF Article
More Like This
Strain Induced Enhanced Photodetector based on Few-layered MoTe2

Rishi Maiti, Chandraman Patil, M.A.S.R. Saadi, S.D. Solares, and Volker J. Sorger
FM2E.2 Frontiers in Optics (FiO) 2020

Strain Induced Indirect-Direct Bandgap Transition in Bilayer MoTe2

Yueyang Yu and C. Z Ning
SM1Q.2 CLEO: Science and Innovations (CLEO:S&I) 2020

Efficient MoTe2 Slot-enhanced Photodetector based on Engineering Gain-Bandwidth-Product Scaling Laws

H. Wang, Z. Ma, R. Maiti, M. Miscuglio, and V. J. Sorger
FM2E.1 Frontiers in Optics (FiO) 2020

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.