High-Linearity V-Band InGaAs/InP Photodiodes Working at 1064 nm

Yiwei Peng; Keye Sun; Yang Shen; Andréas Beling; Joe C. Campbell

doi:10.1364/CLEO_SI.2020.SM3R.4

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper SM3R.4
•https://doi.org/10.1364/CLEO_SI.2020.SM3R.4

High-Linearity V-Band InGaAs/InP Photodiodes Working at 1064 nm

Yiwei Peng, Keye Sun, Yang Shen, Andréas Beling, and Joe C. Campbell

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Photodetectors (SM3R)

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Y. Peng, K. Sun, Y. Shen, A. Beling, and J. C. Campbell, "High-Linearity V-Band InGaAs/InP Photodiodes Working at 1064 nm," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper SM3R.4.

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Abstract

We demonstrate the modified uni-travelling-carrier (MUTC) photodiodes achieving RF power levels of 21.7 dBm to 15 dBm in the frequency range of 39 GHz to 60 GHz, respectively, at 1064 nm wavelength. The photodiodes show good linearity with a third-order intercept point (OIP3) up to 33 dBm at 40 GHz.

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