Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

GaAs epitaxy on (001) Si: below 1×106 cm-2 dislocation density with 2.4 pm buffer thickness

Not Accessible

Your library or personal account may give you access

Abstract

We report a record-low threading dislocation density of 9.3 x105 cm-2 in GaAs thin films directly grown on (001) Si substrates. The total buffer thickness (2.4 pm) is only two thirds of the state-of-art reported value.

© 2020 The Author(s)

PDF Article  |   Presentation Video
More Like This
Effect of different buffer layers and superlattice intermediate layers on GaAs/Si(001)

Yifan Wang, Qi Wang, Zhigang Jia, Xiaoyi Li, Can Deng, Yingce Yan, Xiaomin Ren, Jun Wang, Shiwei Cai, and Yongqing Huang
AF4A.2 Asia Communications and Photonics Conference (ACP) 2013

Toward All MOCVD Grown InAs/GaAs Quantum Dot Laser on CMOS-compatible (001) Silicon

Lei Wang, Bei Shi, Hongwei Zhao, Simone Suran Brunelli, Bowen Song, Douglas C. Oakley, and Jonathan Klamkin
JTu2A.82 CLEO: Applications and Technology (CLEO:A&T) 2019

Quadruple reduction of threshold current density for micro-ring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, and John E. Bowers
SW3Q.3 CLEO: Science and Innovations (CLEO:S&I) 2018

Presentation Video

Presentation video access is available to:

  1. Optica Publishing Group subscribers
  2. Technical meeting attendees
  3. Optica members who wish to use one of their free downloads. Please download the article first. After downloading, please refresh this page.

Contact your librarian or system administrator
or
Log in to access Optica Member Subscription or free downloads


More Like This
Effect of different buffer layers and superlattice intermediate layers on GaAs/Si(001)

Yifan Wang, Qi Wang, Zhigang Jia, Xiaoyi Li, Can Deng, Yingce Yan, Xiaomin Ren, Jun Wang, Shiwei Cai, and Yongqing Huang
AF4A.2 Asia Communications and Photonics Conference (ACP) 2013

Toward All MOCVD Grown InAs/GaAs Quantum Dot Laser on CMOS-compatible (001) Silicon

Lei Wang, Bei Shi, Hongwei Zhao, Simone Suran Brunelli, Bowen Song, Douglas C. Oakley, and Jonathan Klamkin
JTu2A.82 CLEO: Applications and Technology (CLEO:A&T) 2019

Quadruple reduction of threshold current density for micro-ring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, and John E. Bowers
SW3Q.3 CLEO: Science and Innovations (CLEO:S&I) 2018

InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Wen-Qi Wei, Ting Wang, and Jian-Jun Zhang
M2I.2 Asia Communications and Photonics Conference (ACP) 2018

Triple reduction of threshold current for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si

Chen Shang, Yating Wan, Justin Norman, Daehwan Jung, Qiang Li, Kei May Lau, Arthur C. Gossard, and John E. Bowers
STu3N.1 CLEO: Science and Innovations (CLEO:S&I) 2019

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved