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Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

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Abstract

Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.

© 2020 The Author(s)

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