Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO_SI > 2020 > SM3M > SM3M.2

Epitaxial GeSn and its integration in MIR Optoelectronics

Simone Assali, Anis Attiaoui, Mahmoud R. M. Atalla, Alain Dijkstra, Aashish Kumar, Samik Mukherjee, Salim Abdi, and Oussama Moutanabbir

Not Accessible

Your library or personal account may give you access

Abstract

The effect of strain and composition on the opto-electronic properties of (Si)GeSn semiconductors across the 4-300K temperature range will be discussed to pave the way for future device operation up to 4.5 pm wavelengths.

© 2020 The Author(s)

PDF Article
More Like This
Epitaxy-Free Direct Bandgap GeSn Materials and Devices for Facile 3D Photonic Integration

Jifeng Liu and Xiaoxin Wang
STh4I.1 CLEO: Science and Innovations (CLEO:S&I) 2018

Optical lasing micro-cavities fabricated in high Sn content active GeSn layers grown on GeSn step-graded buffers

V. Reboud, M. Bertrand, Q. M. Thai, J. Chrétien, N. Pauc, R. Khazaka, A. Quintero Colmenares, F. Armand Pilon, H. Sigg, P. Rodriguez, A. Chelnokov, J. M. Hartmann, and V. Calvo
JTu5A.7 Bragg Gratings, Photosensitivity and Poling in Glass Waveguides and Materials (BGPP) 2018

Direct Bandgap Type-I GeSn Quantum Well toward Si-based Optoelectronics

Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Seyed A. Ghetmiri, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, and Shui-Qing Yu
STh4I.4 CLEO: Science and Innovations (CLEO:S&I) 2018

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use