Fabry Perot Laser Arrays Covering C+L Band Obtained by Selective Area Growth on InP-SiO2/Si Substrate

C. Besancon; C. Besancon; D. Néel; G. Cerulo; N. Vaissiere; D. Make; K Mekhazni; F. Pommereau; F. Fournel; C. Dupré; C. Jany; F. Bassani; S. David; T. Baron; J. Decobert

doi:10.1364/CLEO_SI.2020.SF1E.7

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper SF1E.7
•https://doi.org/10.1364/CLEO_SI.2020.SF1E.7

Fabry Perot Laser Arrays Covering C+L Band Obtained by Selective Area Growth on InP-SiO₂/Si Substrate

C. Besancon, D. Néel, G. Cerulo, N. Vaissiere, D. Make, K Mekhazni, F. Pommereau, F. Fournel, C. Dupré, C. Jany, F. Bassani, S. David, T. Baron, and J. Decobert

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

From the session
Lasers with Novel Properties (SF1E)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
C. Besancon, D. Néel, G. Cerulo, N. Vaissiere, D. Make, K. Mekhazni, F. Pommereau, F. Fournel, C. Dupré, C. Jany, F. Bassani, S. David, T. Baron, and J. Decobert, "Fabry Perot Laser Arrays Covering C+L Band Obtained by Selective Area Growth on InP-SiO2/Si Substrate," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper SF1E.7.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Get Video
Citation alert
Save article

Abstract

Fabry-Perot laser arrays based on vertical p-i-n laser diode structures grown on InP layer directly bonded to Si wafer is presented. Lasing emission covering the C+L bands is achieved by means of a single-epitaxy Selective Area Growth (SAG) technology.

PDF Article | Presentation Video

More Like This

Heterogeneously Integrated III-V Lasers Fabricated Using Epitaxial Growth on an InP/SiO2/Si Substrate

Takuro Fujii, Koji Takeda, Hidetaka Nishi, and Shinji Matsuo
Tu3K.2 Optical Fiber Communication Conference (OFC) 2018

1.5 μm GaInAsP Stripe Laser Comparison Between InP Substrate and Directly Bonded InP/Si Substrate

Periyanayagam Gandhi Kallarasan, Naoki Kamada, Yuya Onuki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, and Kazuhiko Shimomura
JTu2A.12 CLEO: Applications and Technology (CLEO:A&T) 2018

Integration of GaInAsP Laser Diode on Direct-Bonded Thin Film InP-Si Substrate

Gandhi Kallarasan, Tetsuo Nishiyama, Kamada Naoki, Yuya Onuki, and Kazuhiko Shimomura
16p_C301_4 JSAP-OSA Joint Symposia (JSAP) 2016

Previous Article Next Article

Presentation Video

Presentation video access is available to:

Optica Publishing Group subscribers
Technical meeting attendees
Optica members who wish to use one of their free downloads. Please download the article first. After downloading, please refresh this page.

Contact your librarian or system administrator
or
Log in to access Optica Member Subscription or free downloads