Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Cryogenic-Temperature Operation of SPADs in Deep Submicrometer CMOS

Not Accessible

Your library or personal account may give you access

Abstract

We discuss dark count, afterpulsing, and detection efficiency trends from 77K to 300K in SPADs fabricated in standard 90nm CMOS. With lps dead time, afterpulses and primary dark counts are traded-off optimally at 120K.

© 2020 The Author(s)

PDF Article
More Like This
Deep cryogenic operation of 55 nm CMOS SPADs for quantum information and metrology applications

A. Morelle, F. Gramuglia, P. Keshavarzian, C. Bruschini, D. Chong, J. Tan, M. Tng, E. Quek, and E. Charbon
M2B.7 Quantum Information and Measurement (QIM) 2021

Very-Fast Timing Performance of InGaAs/InAlAs Single Photon Avalanche Diode with Dual Multiplication Layers

Yi-Shan Lee, Yu-Jia Chen, Naseem, Ping-Li Wu, and Jin-Wei Shi
AF1I.8 CLEO: Applications and Technology (CLEO:A&T) 2020

SPAD Image Sensors: from Architectures to Applications

S. Burri and E. Charbon
ITu4C.1 Imaging Systems and Applications (IS) 2012

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.