We present BGaInAs as a potential active region for 1.31 µm laser sources on GaAs substrates. We demonstrate high quality BGaInAs films with high indium concentrations and multiple percent boron concentrations that emit at room temperature.

© 2019 The Author(s)

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription