Abstract
GeSn alloys have recently been the subject of extensive investigations as a new platform to engineer the band structure and directness in group IV semiconductors thus providing a rich playground to implement silicon-compatible photonics and optoelectronics. Herein, we discuss the growth of these metastable semiconductors and their use in a variety of silicon-compatible devices. We will also discuss the effects of strain and Sn content on the optical, electronic, and structural properties of Sn-rich group IV semiconductors. Comments and questions should be directed to the OSA Conference Papers staff (tel: +1 202.416.6191, e-mail: cstech@osa.org).
© 2019 The Author(s)
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