Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Uniformly Tensile-strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Not Accessible

Your library or personal account may give you access

Abstract

Germanium photodetector, formed with a self-aligned dry etching method, together with a tensile silicon nitride sidewall stressor, exhibits a strain profile with improved uniformity and a ~2× enhancement on the quantum efficiency at the L-band.

© 2019 The Author(s)

PDF Article
More Like This
Extension of Germanium-on-Insulator Optical Absorption Edge using CMOS-Compatible Silicon Nitride Stressor

Yiding Lin, Danhao Ma, Kwang Hong Lee, Shuyu Bao, Jurgen Michel, and Chuan Seng Tan
s1595 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017

Strained Germanium Membrane using Thin Film Stressor for High Efficiency Laser

Donguk Nam, Arunanshu M. Roy, Kevin C. Y. Huang, Mark L. Brongersma, and Krishna C. Saraswat
JTuI85 CLEO: Applications and Technology (CLEO:A&T) 2011

Tensile-Strained Ge/SiGe Quantum-Well Microdisks with overlying SiNx Stressors

Ming-Yen Kao, Xiaochi Chen, Yijie Huo, Colleen Shang, Muyu Xue, Kai Zang, Ching-Ying Lu, Edward T. Fei, Yusi Chen, Theodore I. Kamins, and James S. Harris
SF1P.1 CLEO: Science and Innovations (CLEO:S&I) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved