Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)2O3 Schottky photodetectors grown on silicon by pulsed laser deposition

Nasir Alfaraj; Kuang-Hui Li; Chun Hong Kang; Davide Priante; Laurentiu Braic; Zaibing Guo; Tien Khee Ng; Xiaohang Li; Boon S. Ooi

doi:10.1364/CLEO_SI.2019.SF2O.1

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2019),
paper SF2O.1
•https://doi.org/10.1364/CLEO_SI.2019.SF2O.1

Electrical characterization of solar-blind deep-ultraviolet (Al_0.28Ga_0.72)₂O₃ Schottky photodetectors grown on silicon by pulsed laser deposition

Nasir Alfaraj, Kuang-Hui Li, Chun Hong Kang, Davide Priante, Laurentiu Braic, Zaibing Guo, Tien Khee Ng, Xiaohang Li, and Boon S. Ooi

CLEO: Science and Innovations 2019

San Jose, California United States
5–10 May 2019
ISBN: 978-1-943580-57-6

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N. Alfaraj, K. Li, C. H. Kang, D. Priante, L. Braic, Z. Guo, T. K. Ng, X. Li, and B. S. Ooi, "Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)2O3 Schottky photodetectors grown on silicon by pulsed laser deposition," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2019), paper SF2O.1.

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Abstract

This study reports on (Al_0.28Ga_0.72)₂O₃-based ultraviolet-C Schottky metal–semiconductor–metal and metal–insulator–metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias.

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