Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High-Q Resonators on Single Crystal Aluminum Nitride Grown by Molecular Beam Epitaxy

Not Accessible

Your library or personal account may give you access

Abstract

We report the demonstration of high-Q (> 70,000) microring resonators at 770 nm wavelength using single crystal aluminum nitride (AlN) grown by molecular-beam-epitaxy (MBE) which is a crucial growth technique enabling electronic/photonic integration with III-Nitrides.

© 2019 The Author(s)

PDF Article
More Like This
Orientation dependence of the aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate

Michael E. Hoenk, Howard Z. Chen, Amnon Yariv, Hadis Morkoç, and Kerry J. Vahala
WA5 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Grating Couplers and Ring Resonator in Aluminum Nitride

Siddhartha Ghosh and Gianluca Piazza
CM2M.6 CLEO: Science and Innovations (CLEO:S&I) 2012

Molecular Beam Epitaxy Materials for High Speed Digital Heterostructure Devices

D.L. Miller
ThC6 Picosecond Electronics and Optoelectronics (UEO) 1985

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.