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Conferences > CLEO_SI > 2018 > STu4Q > STu4Q.4

High Power, High Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

Steven Ruder, Tom Earles, Christian Galstad, Michael Klaus, Don Olson, and Luke J. Mawst

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Abstract

Red laser diodes were fabricated on GaAs and GaAsP metamorphic-superlattice-substrates. The tensile strained QW on GaAs emitted 45% PCE, 638nm, TM-polarized light at 880mW CW. The compressively strained QW on the metamorphic structure emitted 639nm TE-polarized light with T0=90K and T1=300K.

© 2018 The Author(s)

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