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Conferences > CLEO_SI > 2018 > STu4Q > STu4Q.2

Recent progress in GaN-based Vertical-Cavity Surface-Emitting Lasers Having Dielectric Distributed Bragg Reflectors

Hiroshi Nakajima, Jugo Mitomo, Kentaro Fujii, Masayuki Tanaka, Masamichi Ito, Maho Ohara, Noriko Kobayashi, Hideki Watanabe, Tatsushi Hamaguchi, Rintaro Koda, and Hironobu Narui

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Abstract

The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.

© 2018 The Author(s)

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