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Precise Two-step Growth of 940-nm VCSEL on a GaAsP-capped DBR Wafer

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Abstract

We report a 2-step growth for 940-nm VCSELs on DBRs capped by a novel protective GaAsP layer, desorbed during the secondary growth including laser region to yield precise high quality VCSELs with sub-mA threshold.

© 2018 The Author(s)

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