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Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers

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Abstract

Incorporation of bismuth into III-V emitters typically results in dramatically reduced luminescence efficiency. We present type-I dilute-bismide III-V quantum wells exhibiting enhanced photoluminescence near 4 µm, suggesting a viable route to extend diode laser emission.

© 2018 The Author(s)

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