Epitaxy-Free Direct Bandgap GeSn Materials and Devices for Facile 3D Photonic Integration

Jifeng Liu; Xiaoxin Wang

doi:10.1364/CLEO_SI.2018.STh4I.1

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper STh4I.1
•https://doi.org/10.1364/CLEO_SI.2018.STh4I.1

Epitaxy-Free Direct Bandgap GeSn Materials and Devices for Facile 3D Photonic Integration

Jifeng Liu and Xiaoxin Wang

CLEO: Science and Innovations 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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Mid-IR Optoelectronics (STh4I)

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J. Liu and X. Wang, "Epitaxy-Free Direct Bandgap GeSn Materials and Devices for Facile 3D Photonic Integration," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper STh4I.1.

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Abstract

We present direct bandgap GeSn crystallized on dielectric layers at <450 °C with room-temperature photoluminescence, ~0.1 ns transient optical gain >4000/cm at λ=2100–2350 nm, and a photoconductive responsivity of ~10 mA/W @1V at λ=2180 nm.

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