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Hot-Carrier Induced Photoluminescence Enhancement and Quenching in GaAs and InP Driven by Intense THz Pulses

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Abstract

We show how intense terahertz pulses can modulate photoluminescence lineshape and efficiency in direct gap semiconductors through hot-carrier-enhancement of high energy PL and diffusion induced quenching of low energy photoluminescence. We compare these effects in the GaAs and InP.

© 2018 The Author(s)

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