Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm

Not Accessible

Your library or personal account may give you access

Abstract

Cascade type-I quantum well GaSb-based laser heterostructures with broad optical gain demonstrated tuning from 2.99 to 3.27 μm (above 35 meV) in Littrow external cavity configuration. The devices generated up to 5 mW of the narrow spectrum output power in continuous wave regime at room temperature.

© 2018 The Author(s)

PDF Article
More Like This
3 µm GaSb-based Type-I Quantum-well Diode Lasers with Cascade Pumping Scheme

Rui Liang, Takashi Hosoda, Gela Kipshidze, Leon Shterengas, and Gregory Belenky
CM2K.5 CLEO: Science and Innovations (CLEO:S&I) 2013

GaSb-based 2.7μm laser diode with GaAs top cladding

Timothy Bate, Chunte Lu, Robert Palomino, Chi Yang, Timothy C. Newell, Sanh Luong, and Ron Kaspi
JTu2A.27 CLEO: Applications and Technology (CLEO:A&T) 2018

Narrow Ridge Cascade Diode Lasers with λ >3 µm

Meng Wang, Takashi Hosada, Leon Shterengas, Aaron Stein, Ming Lu, Gela Kipshidze, and Gregory Belenky
STh3L.2 CLEO: Science and Innovations (CLEO:S&I) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.