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Conferences > CLEO_SI > 2018 > JW2A > JW2A.129

Carrier relaxation dynamics of InGaN/GaN dot-in-nanowires

H. George, Y.-H. Ra, Z. Mi, and T. Norris

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Abstract

Carrier relaxation was investigated for InGaN/GaN dot-in-nanowires using femtosecond pump-probe in transmission 400nm pump/white light probe. Though bright emitters, the localization of states contributes to relaxation rates which are faster than expected.

© 2018 The Author(s)

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