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Optical gain characterization of nano-ridge amplifiers epitaxially grown on a standard Si wafer

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Abstract

With this paper, the authors report optical gain characterization of InGaAs/GaAs nano-ridge amplifierss epitaxially grown on a standard 300-mnm Si wafer, by varying strip length (VSL) method. The measured material gain is ~ 4000cm1, which is comparable with conventional GaAs material.

© 2018 The Author(s)

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