Femtosecond Laser Direct Writing with Gating Exposure

Yan-Hao Yu; Jun Jiang; Qi-Dai Chen; Hong-Bo Sun

doi:10.1364/CLEO_SI.2017.STh4J.7

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper STh4J.7
•https://doi.org/10.1364/CLEO_SI.2017.STh4J.7

Femtosecond Laser Direct Writing with Gating Exposure

Yan-Hao Yu, Jun Jiang, Qi-Dai Chen, and Hong-Bo Sun

CLEO: Science and Innovations 2017

San Jose, California United States
14–19 May 2017
ISBN: 978-1-943580-27-9

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Ultrafast Laser Processing (STh4J)

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Y. Yu, J. Jiang, Q. Chen, and H. Sun, "Femtosecond Laser Direct Writing with Gating Exposure," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper STh4J.7.

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Abstract

We proposed a gating exposure technique for femtosecond laser direct writing. The average laser power could be linearly controlled with the scanning speed while maintaining the exposure dose on the scanning path.

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