High-quality GaAs grown on aluminum film

Chia-Chu Cheng; Chu-Chun Wu; Yen-Ting Fan; Sheng-Di Lin

doi:10.1364/CLEO_SI.2017.STh3I.8

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper STh3I.8
•https://doi.org/10.1364/CLEO_SI.2017.STh3I.8

High-quality GaAs grown on aluminum film

Chia-Chu Cheng, Chu-Chun Wu, Yen-Ting Fan, and Sheng-Di Lin

CLEO: Science and Innovations 2017

San Jose, California United States
14–19 May 2017
ISBN: 978-1-943580-27-9

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Quantum Confined Materials & Devices (STh3I)

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C. Cheng, C. Wu, Y. Fan, and S. Lin, "High-quality GaAs grown on aluminum film," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper STh3I.8.

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Abstract

We have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence.

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