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Study of SiGeSn/GeSn/SiGeSn Quantum Well towards All Group-IV-Optoelectronics

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Abstract

SiGeSn/GeSn/SiGeSn quantum well was grown on Ge buffered Si substrate via chemical vapor deposition. Photoluminescence spectra were obtained using three excitation lasers, which could in-depth probe the optical transition characteristics of the quantum well.

© 2017 Optical Society of America

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